A nitride semiconductor laser (1) includes: a first nitride semiconductor layer (20); a light-emitting layer (30) formed on the first nitride semiconductor layer (20) and including a nitride semiconductor; a second nitride semiconductor layer (40) formed on the light-emitting layer (30) and having a ridge portion (40a); an electrode component (50) formed on the second nitride semiconductor layer (40), and which is wider than the ridge portion (40a); and a dielectric layer (60) formed on side surfaces of the ridge portion (40a) and including SiO 2 . A space (70) is present between the electrode component (50) and the dielectric layer (60), and the electrode component (50) is prevented from being in contact with the dielectric layer (60) by the space (70), and is in contact with the upper surface of the ridge portion (40a).
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