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PROCESS FOR PRODUCING A STRAINED LAYER BASED ON GERMANIUM-TIN
PROCESS FOR PRODUCING A STRAINED LAYER BASED ON GERMANIUM-TIN
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机译:基于锗锡的应变层的制备方法
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摘要
The invention pertains to a process for producing a strained layer based on germanium-tin (GeSn). The process includes a step of producing a semiconductor stack containing a layer based on GeSn and having an initial strain value that is non-zero; a step of structuring the semiconductor stack so as to form a structured portion and a peripheral portion, the structured portion including a central section linked to the peripheral portion by at least two lateral sections having an average width greater than an average width of the central section; and a step of suspending the structured portion, the central section then having a final strain value higher than the initial value.
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