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Misfit dislocation formation in silicon(1-x) germanium(x) strained layers grown by Limited Reaction Processing

机译：通过有限反应处理在硅（1-x）锗（x）应变层中形成错配位错

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作者
Noble, David Bill.;
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作者单位

Stanford University.;

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授予单位 Stanford University.;
学科 Materials science.;Electrical engineering.
学位 Ph.D.
年度 1991
页码 164 p.
总页数 164
原文格式 PDF
正文语种 eng
中图分类
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入库时间 2022-08-17 11:54:42

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1. Formation of misfit dislocations during growth of In_xGa_(1-x)As/GaAs strained-layer heterostructures [J] . X W Liu, A A Hopgood, B F Usher Semiconductor Science and Technology . 1999,第12期

机译：In_xGa_（1-x）As / GaAs应变层异质结构生长过程中失配位错的形成
2. Misfit strain relaxation in strained-Si layers on silicon-germanium-on- insulator substrates [J] . Norio Hirashita, Yoshihiko Moriyama, Naoharu Sugiyama, Applied Physics Letters . 2006,第9期

机译：绝缘子上硅锗衬底上的应变硅层中的失配应变松弛
3. Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface [J] . Bolkhovityanov Y.B., Vasilenko A.P., Gutakovskii A.K., Physics of the solid state . 2011,第10期

机译：Ge / InGaAs / GaAs异质结构中的应变锗薄膜：Ge / InGaAs界面处的边缘失配位错的形成
4. The origin of misfit dislocations and the surface cross-hatch pattern in low-misfit strained epitaxial layers [C] . R Beanland, A R Boyd Institute of Physics Conference on Microscopy and Semiconducting Materials . 1995

机译：低误区紧张外延层中的错位脱臼的起源和表面交叉舱口图
5. Photoluminescence study of silicon(1-x) germanium(x)/silicon and silicon/germanium strained layer superlattices. [D] . Steiner, Todd David. 1992

机译：硅（1-x）锗（x）/硅和硅/锗应变层超晶格的光致发光研究。
6. Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction [O] . Andrei Benediktovitch, Alexei Zhylik, Tatjana Ulyanenkova, -1

机译：通过共面和非共面X射线衍射表征在（011）和（111）取向硅上生长的锗层中的位错
7. Formation of misfit dislocations in strained-layer GaAs/In_xGa_1–xAs/GaAs heterostructures during postfabrication thermal processing [O] . Liu, X.W., Hopgood, A.A., Usher, B.F., 2003

机译：在后加工热处理过程中应变层Gaas / In _{x Ga _{1-x as / Gaas异质结构中失配位错的形成}}
8. Criterion for Arrest of a Threading Dislocation in a Strained Epitaxial Layer Dueto an Interface Misfit Dislocation in Its Path [R] . Freund, L. B. 1990

机译：应变外延层中线程位错逮捕的判据及其路径中的界面错配位错

Misfit dislocation formation in silicon(1-x) germanium(x) strained layers grown by Limited Reaction Processing

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