SUSCEPTOR, EPITAXIAL GROWTH DEVICE, EPITAXIAL SILICON WAFER MANUFACTURING METHOD, AND EPITAXIAL SILICON WAFER

摘要

Provided is a susceptor with which it is possible to increase the circumferential uniformity of the flatness of an epitaxial layer of an epitaxial silicon wafer. A susceptor 100 according to the present invention has a recessed counterbore portion for placing a silicon wafer W, wherein a radial distance L between the center of the susceptor and an opening edge of the counterbore portion varies in the circumferential direction with a period of 90. If the angle of the position at which the radial distance L is a minimum is defined as 0°, the radial distance L has a minimum value L₁ at 90°, 180°, and 270°, and the radial distance L has a maximum value L₂ at 45°, 135°, 225°, and 315°. The susceptor 100, as viewed from above, has an opening edge 110C defining four elliptic arcs protruding radially outward.