SUSCEPTOR, EPITAXIAL GROWTH APPARATUS, METHOD OF PRODUCING EPITAXIAL SILICON WAFER, AND EPITAXIAL SILICON WAFER

摘要

Provided is a susceptor which makes it possible to increase the circumferential flatness uniformity of an epitaxial layer of an epitaxial silicon wafer.;A susceptor 100 is provided with a concave counterbore portion on which a silicon wafer W is placed, and the radial distance L between the center of the susceptor and an opening edge of the counterbore portion varies at 90° periods in the circumferential direction. Meanwhile, when the angle at which the radial distance L is minimum is 0°, the radial distance L is a minimum value L₁ at 90°, 180°, and 270°; and the radial distance L is a maximum value L₂ at 45°, 135°, 225°, and 315°. Accordingly, the pocket width L_p also varies in conformance with the variations of the radial distance L. The opening edge 110C describes four elliptical arcs being convex radially outward when the susceptor 100 is viewed from above.