Susceptor, epitaxial growth apparatus, method of manufacturing epitaxial silicon wafer, and epitaxial silicon wafer

摘要

Provided is a susceptor capable of improving circumferential uniformity of flatness of an epitaxial layer of an epitaxial silicon wafer. The susceptor 100 according to the present invention is provided with a concave counterbore portion on which the silicon wafer W is mounted, and the radial distance L between the center of the susceptor and the opening edge of the counterbore portion is circumferentially changed at a cycle of 90 degrees. And when the angle of the position where the radial distance L becomes the minimum is 0 °, the radial distance L becomes the minimum value L1 at each of 90 °, 180 °, and 270 °, and is 45 °, The radial distance L reaches the maximum value L2 at each of 135 degrees, 225 degrees, and 315 degrees, and the opening edge 110C when the susceptor 100 is viewed from above draws four elliptical arcs with the radially outward convex.