METHOD FOR FABRICATING POLYSILICON TFT SUBSTRATE AND POLYSILICON TFT SUBSTRATE

摘要

A method for fabricating a polysilicon TFT substrate comprises: step S10, depositing an amorphous silicon film layer on a base substrate (10); step S11, performing excimer laser annealing on the amorphous silicon film layer to form a polysilicon active layer (13); step S12, ion doping a channel region of the polysilicon active layer (13) to form a channel doping region (130); step S13, performing deposition on the polysilicon active layer (13) to form a gate insulating layer (14); step S14, performing hydrogen ion implantation into the channel doping region (130) of the polysilicon active layer; step S15, performing deposition on the gate insulating layer (14) to form a gate layer (15); step S16, ion doping a source region and a drain region of the polysilicon active layer (13) to form a source doping region (131) and a drain doping region (132); step S17, performing deposition on the gate layer (15) to form an interlayer insulating layer (16); step S18, forming a first via hole (160) and a second via hole (161) on the interlayer insulating layer (16), and performing deposition to respectively form a source electrode film layer (162) and a drain electrode film layer (163) for electrical connection to the source doping region (131) and the drain doping region (132), respectively. A corresponding polysilicon TFT substrate is also disclosed. The invention can accurately control the concentration and depth of the added hydrogen atoms and improve TFT yield.