首页> 外文会议>Electron Devices Meeting, 1999. IEDM Technical Digest. International >Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs
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Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs

机译:等离子体处理,衬底类型和结晶方法对低温多晶硅TFT性能和可靠性的影响

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摘要

A complete performance and reliability study on effects of different plasma treatments (NH/sub 3/ and N/sub 2/O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, >600/spl deg/C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.
机译:完整的性能和可靠性研究,涉及不同等离子处理(NH / sub 3 /和N / sub 2 / O),衬底类型(氧化硅晶片和石英)以及晶化方法(准分子激光退火和固相晶化)的影响据报道低温多晶硅(LTPS,> 600 / spl deg / C)TFT。结果表明,用不同的制造方法制造的器件在各种应力​​条件下表现出不同的降解性能。

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