The Effect Of Crystallization Technology And Gate Insulator Deposition Method On The Performance And Reliability Of Polysilicon Tfts

摘要

Polysilicon TFTs were fabricated using solid phase crystallization (SPC) and also two different excimer laser annealing techniques (ELA) for polysilicon crystallization. Moreover, we tried two different gate oxide deposition methods, using PECVD or TEOS LPCVD. Comparing the characteristics of the fabricated TFTs, we were able to probe the effects of the polysilicon crystallization techniques and the gate oxide deposition methods on TFT performance and reliability. This way, an optimization of the TFT fabrication procedure could be possible.