CRYSTALLIZATION METHOD FOR POLYSILICON TFT FOR IMPROVING PROPERTIES OF SEMICONDUCTOR LAYER AND APPARATUS FOR PLANARIZING CRYSTALLIZED POLYSILICON LAYER

摘要

Purpose: from the polysilicon layer of crystallization, the polysilicon layer for being used to shakeout a crystallization for the method for crystallising of a polycrystalline SiTFT (thin film transistor) and a device is arranged to improve the prominent cereal of characteristic an of semiconductor layer by removal. Construction: the substrate with a polysilicon layer is loaded (S501). Substrate alignment (S502). Prominent cereal removes from substrate (S503). Substrate is cleaned (S504). Substrate is overthrown (S505). The substrate of reversing is uploaded (S506).