Method of crystallizing/activating polysilicon layer and method of fabricating thin film transistor having the same polysilicon layer

摘要

Provided is a method of crystallizing/activating a polysilicon layer and a method of fabricating a thin film transistor having the same polysilicon layer, in which when a gate material is patterned to form a gate electrode and define source/drain regions, the gate material on source/drain regions partially remains, so that crystallizing and activating processes are performed at the same time.