METHOD FOR PROVIDING TRANSPARENT SUBSTRATE HAVING PROTECTION LAYER ON CRYSTALIZED POLYSILICON LAYER, METHOD FOR FORMING POLYSILICON ACTIVE LAYER THEREOF AND METHOD FOR MANUFACTURING POLYSILICON TFT USING THE SAME

摘要

Disclosed is a method of providing a transparent substrate having a poly-Si layer on which a protection layer is deposited to maintain the interface between poly-Si and gate insulator clean. This invention discloses also the method of forming a poly-Si active layer and poly-Si thin film transistor using the poly-Si active layer. For this purpose, the present invention discloses a method of providing a transparent substrate having a poly-Si layer on which a protection layer is deposited, comprising the steps of; forming an a-Si thin film on a transparent substrate, crystallizing a part of or a whole area of a-Si thin film, forming a protection layer on the crystallized poly-Si layer.