We have developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.0 × 1021 m?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 5 sccm. We confirmed that the temperatures of tungsten films increased to above 1000?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of tungsten films deposited on amorphous silicon films on glass substrates and formed polycrystalline silicon films. To utilize this method, we can perform the crystalline process only on device regions. TFTs were fabricated on the polycrystalline silicon films and the electron mobilities of 60 cm2/Vs were obtained.
展开▼
机译:平成28年度论文赏受赏轮文:Effect of Si/Fe Composition, Substrate Temperature, and Substrate Orientation on the Structure and Magnetic Properties of Fe-Si Alloy Film