SELECTOR ELEMENT WITH NEGATIVE DIFFERENTIAL RESISTANCE (NDR) ELEMENT FOR LOW VOLTAGE BIPOLAR MEMORY DEVICES

摘要

Embedded non-volatile memory structures having selector elements with negative differential resistance (NDR) elements are described. In an example, a memory device includes a word line. A selector element is above the word line. The selector element includes a selector material layer and a negative differential resistance (NDR) element different than the selector material layer. A bipolar memory element is above the word line. A conductive electrode is between the elector element and the bipolar memory element. A bit line is above the word line.