Negative differential resistance (NDR) elements and memory device using the same

摘要

A two terminal, silicon based negative differential resistance (NDR) element is disclosed, to effectuate a type of NDR diode for selected applications. The two terminal device is based on a three terminal NDR-capable FET which has a modified channel doping profile, and in which the gate is tied to the drain. This device can be integrated through conventional CMOS processing with other NDR and non-NDR elements, including NDR capable FETs. A memory cell using such NDR two terminal element and an NDR three terminal is also disclosed.