Investigation of InGaP/GaAs multiple negative-differential-resistance (NDR) device prepared by MOCVD

摘要

An interesting multiple S-shaped negative-differential-resistance (NDR) phenomenon is observed for an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) under the inverted operation mode. This behavior is resulted from a sequential avalanche multiplication and two-stage barrier lowering effect. Under normal operation mode, a typical common-emitter current gain of 60 is obtained at collector current density of 400A/cm2 for the studied HEBT without emitter-edge thinning structure.