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Negative differential resistance (NDR) elements and memory device using the same
Negative differential resistance (NDR) elements and memory device using the same
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机译:负差分电阻(NDR)元件和使用该元件的存储设备
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摘要
A two-terminal NDR device can be formed by coupling the gate and drain of an NDR-capable FET, such that the coupled gate and drain form a first terminal and the source of the NDR-capable FET forms the second terminal. By applying an appropriate body bias between the body and source of an NDR-capable FET configured in this manner, the NDR-capable FET can be forced to operate with a negative threshold voltage, thereby allowing the resulting two-terminal device to exhibit the desired NDR characteristics. This two-terminal device can, for example, be used as a load element in a static random access memory (SRAM) cell and various other circuits where the NDR behavior of the device would be beneficial.
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