A Novel Elementary Single Electron Transistor Negative Differential Resistance Device

摘要

A novel elementary single electron transistor (SET) device architecture providing negative differential resistance (NDR) is proposed and verified with SET analytical models. The proposed architecture consists of two cross-connected SETs, biased with constant current source, and it exhibits negative differential resistance for a significant range of input voltage. The effects of bias current and SET asymmetry on the circuit characteristics are shown from a design perspective. Comparison of the proposed architecture with other NDR devices is also presented.