Validation and analysis of negative differential resistance of single-electron transistor with conductance model

摘要

Despite many years of effort, the precise mechanism of negative differential resistance (NDR) of single-electron transistor (SET) remains unclear, and this lack of knowledge has become a major obstacle in the research and development of new electronic devices to make use this effect. This paper proposes a conductance model to validate and analysis NDR of SET, which is based on the classical orthodox theory of single electron and obtained by analyzing the source of the single-electron transistor leakage conductance, and carried out a detailed analysis and discussion. The source of leakage conductance of the SET with the source-drain voltage changes occur periodic oscillation attenuation and gradually converge to the intrinsic conductivity values with the increase of the source-drain voltage, and the NDR effect can be attributed to Coulomb blockade. It is showed from the results that this method can be used to validate and preliminary explain the NDR effect of SET.