Negative differential resistance single electron transistor

摘要

A useful model is nanotechnology, the technology of making single electron transistors, which can be used to design new computing devices, Communication and sensor equipment.;An electronic device based on a single electron transistor includes a base with a source electrode and a source electrode,Control the shutter electrode,The runoff electrode and the source electrode are made of conductive materials,Located on a plane, forming a gap and connected by a bridge,The size is up to 50 nm and contains 10 impurity atoms in its quasi two-dimensional layer,The distance between impurity atoms can reach 7 nm,Provide electron tunneling and negative differential resistance to the electrode runoff and source.;The technical problems solved and the technical achievements obtained are the establishment of electronic devices on the basis of single electron transistors, Achieve negative differential impedance.