首页> 外国专利> SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THEREOF

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THEREOF

机译:半导体存储器装置及其操作方法

摘要

The present invention relates to a semiconductor memory device, which comprises a memory cell array, a peripheral circuit, and a control logic. The memory cell array includes a plurality of memory blocks. The peripheral circuit performs a read operation for the memory cell array. The control logic controls an operation of the peripheral circuit. Additionally, the control logic controls the peripheral circuit to perform a repair column masking operation of a selected memory block among the memory blocks, controls the peripheral circuit to perform a first test operation for first drain selection transistors included in the selected memory block, and controls the peripheral circuit to perform the first test operation for second drain selection transistors different from the first drain selection transistors while maintaining a result of the repair column masking operation.
机译:半导体存储器件技术领域本发明涉及一种半导体存储器件,其包括存储单元阵列,外围电路和控制逻辑。存储单元阵列包括多个存储块。外围电路对存储单元阵列执行读取操作。控制逻辑控制外围电路的操作。另外,控制逻辑控制外围电路对存储块中的所选存储块执行修复列屏蔽操作,控制外围电路对包括在所选存储块中的第一漏极选择晶体管执行第一测试操作,并控制外围电路对不同于第一漏极选择晶体管的第二漏极选择晶体管执行第一测试操作,同时保持修复列掩蔽操作的结果。

著录项

  • 公开/公告号KR20190052436A

    专利类型

  • 公开/公告日2019-05-16

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号KR20170148119

  • 发明设计人 KIM SANG SIK;

    申请日2017-11-08

  • 分类号G11C29/44;G11C29/56;

  • 国家 KR

  • 入库时间 2022-08-21 11:50:58

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号