An object of the present invention is to provide a polishing liquid in which dishing and defects are less likely to occur on a polished surface when applied to CMP of a to-be-polished object including a cobalt-containing layer. Another object of the present invention is to provide a method for producing a polishing liquid, a polishing liquid stock solution, a polishing liquid stock solution receptor, and a chemical mechanical polishing method. The polishing liquid of the present invention is a polishing liquid for chemical mechanical polishing containing colloidal silica having an association degree of 1 to 3, an organic acid, an azole compound, and hydrogen peroxide, wherein the polishing liquid is in contact with the cobalt substrate for 24 hours. When it makes it, the reaction layer of thickness 0.5-20 nm containing a cobalt atom is formed on the said cobalt substrate.
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