Method for Analyzing Effective Polishing Frequency and Times for Chemical Mechanical Planarization Polishing Wafer with Different Polishing Pad Profiles

摘要

This study investigates a method for analyzing the polishing frequency and times for chemical mechanical Polishing (CMP) to polish wafer with different polishing pad profiles. In the first, the images of wafer and polishing pad are transformed as binary images for calculation by numerical matrices, then calculate the position change under the relative movement, and use the adding model of effective polishing times (EPT) to estimate the distribution of wafer polishing within the preset time and polishing path. Finally, using the target function (TF) to compare the better distribution of EPT under the conditions of various parameters. This method is applicable to the analysis of the effective polishing frequency (EPF) and the EPT of general CMP and of compensating CMP and takes different profiles of polishing pad and different polishing path models into consideration, which can be referential for the design of better polishing pad profile in future.