AN OXIDE-BASED RESISTIVE SWITCHING MEMORY DEVICE USING A SINGLE NANO-PORE STRUCTURE AND METHOD FOR FABRICATING THE DEVICE

摘要

An oxide based resistance switching memory device using a single nano void structure and a method for fabricating the same are disclosed. A method for fabricating a resistance switching memory device includes forming a lower electrode layer on a substrate, forming a memory material layer on the lower electrode layer, forming a metal layer for void formation in a predetermined region of the memory material layer A void forming step of forming voids by removing a memory material layer under the void forming metal layer, and an upper electrode forming step of forming an upper electrode on the formed voids.