Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method

摘要

The resistive switching characteristics of TiO2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper.The Ti foil serves as the supply of Ti atoms for growth of the TiO2 nanowires,making the preparation straightforward.It also acts as a bottom electrode for the device.A top Al electrode was fabricated by e-beam evaporation process.The Al/TiO2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 104 s and an OFF/ON ratio of approximately 70.The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field.This provides a facile way to obtain metal oxide nanowire-based ReRAM device in the future.