A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

摘要

A physical-based simplified model is presented to quantify the resistive switching behavior of oxide-based resistive random access memory (RRAM). In this model, the analytical expressions of the RESET time of RRAM devices and the correlated resistance in high-resistance states $(R_{rm HRS})$ are presented and experimentally verified. Based on the extracted physical-based model parameters from measured data, the resistive switching characteristics of oxide-based RRAM devices can be evaluated.