Method for manufacturing silicon carbide polycrystalline substrate and equipment for manufacturing silicon carbide polycrystalline substrate

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide polycrystalline substrate and an apparatus for producing a silicon carbide polycrystalline substrate, which can suppress the occurrence of warpage of the silicon carbide polycrystalline substrate. The method for producing a silicon carbide polycrystalline substrate of the present invention includes a removing step of burning a graphite-supported substrate having a silicon carbide polycrystalline film formed on its surface by chemical vapor deposition to remove the graphite-supported substrate. The graphite-supported substrate on which the silicon carbide polycrystalline film is formed is held at 500 ° C. or higher until the removal step is started. Further, the apparatus for manufacturing a silicon carbide polycrystal substrate of the present invention comprises a vapor deposition furnace for obtaining a vapor deposition substrate by forming a silicon carbide polycrystal film on a graphite support substrate by chemical vapor deposition, and burning the vapor deposition substrate. A combustion furnace for removing the graphite-supported substrate, a transport path for directly connecting the vapor deposition furnace and the combustion furnace, and a transport means for transporting the vapor-deposited substrate through the transport path are provided. [Selection diagram] Fig. 1