Method of manufacturing silicon carbide polycrystalline substrate, silicon carbide polycrystalline film, and manufacturing method of polycrystalline silicon carbide substrate

摘要

Problem to be solved: after forming a SiC polycrystalline film with nitrogen doping gas on the supporting substrate by chemical vapor deposition methodIn the case of manufacturing a SiC polycrystalline substrate by separating from the support substrateDue to stress imbalance in the SiC polycrystalline substrate after the separation,By solving the problem that the warpage of SiC polycrystalline substrate becomes large,It is to provide a high conductivity silicon carbide polycrystalline substrate with reduced warpage.Solution: the first layer 121, the second layer 122 and the third layer 123 stacked in the thickness direction, and both of the first layer 121 and the third layer 123 have a concentration of 10 to 105 times nitrogen atoms and have a thickness of 6 to 35 times for the second layer Features a silicon carbide polycrystalline substrate.Diagram