Surface treatment method for graphite support substrate, film formation method for silicon carbide polycrystalline film, and manufacturing method for silicon carbide polycrystalline substrate

摘要

PROBLEM TO BE SOLVED: To provide a method for surface treatment of a graphite support substrate, a method for forming a silicon carbide polycrystalline film, and a method for producing a silicon carbide polycrystalline substrate, which can suppress warpage of the silicon carbide polycrystalline substrate. SOLUTION: The surface treatment method of a graphite support substrate includes a fragile layer forming step of blasting a surface to be formed of a graphite support substrate to form a fragile layer having an average thickness of 0.1 to 1.0 μm. [Selection diagram] Fig. 1