A method for forming a silicon carbide polycrystalline film and a method for manufacturing a silicon carbide polycrystalline substrate.

摘要

PROBLEM TO BE SOLVED: To form a silicon carbide polycrystalline film having few voids to produce a silicon carbide polycrystalline substrate having few voids, and to manufacture a silicon carbide polycrystalline substrate. provide. A film-forming step of forming a silicon carbide polycrystal film on a support substrate by using a nitrogen gas, a silicon-based gas, a carbon-based gas, and a hydrogen gas by a chemical vapor phase growth method is included. The ratio of the number of atoms of the nitrogen atom of the nitrogen gas, the silicon atom of the silicon-based gas, the carbon atom of the carbon-based gas, and the hydrogen atom of the hydrogen gas used in the film forming step is N: Si: C: H = 40: 1: 1: 2 to 40: 1: 1: 20, and the flow rate of the hydrogen gas is in the range of 1 slm to 10 slm. [Selection diagram] Fig. 2