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A new method for Synthesis of Epitaxial Films of Silicon Carbide on Sapphire Substrates (α-Al2O3)

机译：在蓝宝石底物上合成碳化硅外延薄膜的一种新方法（α-Al2O3）

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S.A. Kukushkin; A.V. Osipov; A.V. Redkov; A.S. Grashchenko; N.A. Feoktistov; S.D. Fedotov; V.N. Statsenko; E.M. Sokolov; S.P. Timoshenkov;
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1. Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [1120]- and [0001]-Oriented Silicon Carbide Substrates [J] . S.M. BISHOP, C.L. REYNOLDS, Z. LILIENTAL-WEBER, Journal of Electronic Materials . 2007,第4期

机译：[1120]和[0001]取向的碳化硅衬底上生长的碳化硅外延膜的多型稳定性和显微结构表征
2. Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [ $ {hbox{11}}overline{{hbox{2}}} {hbox{0}} $ ]- and [0001]-Oriented Silicon Carbide Substrates [J] . S.M. Bishop, C.L. Reynolds Jr., Z. Liliental-Weber, Journal of Electronic Materials . 2007,第4期

机译：[$ {hbox {11}} overline {{hbox {2}}} {hbox {0}} $]和[0001]取向的碳化硅衬底上生长的碳化硅外延膜的多型稳定性和显微结构表征
3. Characterization of Inhomogeneity in Silicon Dioxide Films on 4H-Silicon Carbide Epitaxial Substrate Using a Combination of Fourier Transform Infrared and Cathodoluminescence Spectroscopy [J] . Masanobu Yoshikawa, Hirohumi Seki, Keiko Inoue, Applied Spectroscopy: Society for Applied Spectroscopy . 2014,第10期

机译：傅里叶变换红外光谱和阴极荧光光谱相结合表征4H-碳化硅外延衬底上二氧化硅薄膜的不均匀性
4. Characterization of Single Crystal Epitaxial Aluminum Nitride Thin Films on Sapphire, Silicon Carbide and Silicon Substrates by X-ray Double Crystal Diffractometry and Transmission Electron Microscopy [C] . J. Chaudhuri, R. Thokala, J. H. Edgar, Annual conference on applications of X-ray analysis . 1997

机译：X射线双晶衍射测定和透射电子显微术中蓝宝石，碳化硅和硅基板上单晶外延铝氮化铝薄膜的表征
5. Growth and high rate reactive ion etching of epitaxially grown barium hexaferrite films on single crystal silicon carbide substrates. [D] . Chen, Zhaohui. 2009

机译：在单晶碳化硅衬底上外延生长的六价铁酸钡薄膜的生长和高速率反应离子刻蚀。
6. Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications [O] . Florian Bartoli, Jérémy Streque, Jaafar Ghanbaja, 2020

机译：SC0.09Al0.91N和SC0.18A10.82N的外延生长通过磁控溅射对表面声波应用的磁控溅射薄膜
7. Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon [O] . Dina I. Bakranova, Sergey A. Kukushkin, Kair Kh. Nussupov, 2016

机译：通过在高电阻率的表面上更换原子的新方法生长的外延碳化硅膜（111）取向硅
8. Epitaxial Growth of Al2O3 on Sapphire and Ruby Substrates by Chemical Vapor Deposition [R] . Wong, P., Messier, D. R. 1970

机译：化学气相沉积法在蓝宝石和红宝石衬底上外延生长al2O3

A new method for Synthesis of Epitaxial Films of Silicon Carbide on Sapphire Substrates (α-Al2O3)

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