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Method for producing packaged MEMS assemblies at the wafer level, and packaged MEMS assembly

机译:在晶片级上生产封装的MEMS组件的方法以及封装的MEMS组件

摘要

A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.
机译:一种制造方法包括:向半导体衬底提供具有在半导体衬底的第一主表面区域上具有切口的布线层堆叠,在该第一主表面区域上,MEMS组件以暴露的方式布置在切口中,并且通过接触元件突出地布置在半导体衬底的金属化区域中。布线层堆叠;将在中间阶段固化的b阶段材料层施加到布线层堆叠上,使得切口被b阶段材料层覆盖,并且垂直突出的贯通接触元件被引入b阶段材料层中;固化b阶段材料层以获得固化的b阶段材料层;减薄固化的b阶材料层;在所述薄的固化的b阶材料层上施加重分布层(RDL)结构,以通过所述贯通接触元件在所述布线层堆叠与所述RDL结构之间获得电连接。

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