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FERROELECTRIC-BASED FIELD-EFFECT TRANSISTOR WITH THRESHOLD VOLTAGE SWITCHING FOR ENHANCED ON-STATE AND OFF-STATE PERFORMANCE
FERROELECTRIC-BASED FIELD-EFFECT TRANSISTOR WITH THRESHOLD VOLTAGE SWITCHING FOR ENHANCED ON-STATE AND OFF-STATE PERFORMANCE
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机译:基于铁电的场效应晶体管,具有阈值电压开关,可增强通态和关态性能
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摘要
Techniques are disclosed herein for ferroelectric-based field-effect transistors (FETs) with threshold voltage (VT) switching for enhanced RF switch transistor on-state and off-state performance. Employing a ferroelectric gate dielectric layer that can switch between two ferroelectric states enables a higher VT during the transistor off-state (VT,hi) and a lower VT during the transistor on-state (VT,lo). Accordingly, the transistor on-state resistance (Ron) can be maintained low due to the available relatively high gate overdrive (Vg,on−VT,lo) while still handling a relatively high maximum RF power in the transistor off-state due to the high VT,hi −Vg,off value. Thus, the Ron of an RF switch transistor can be improved without sacrificing maximum RF power, and/or vice versa, the maximum RF power can be improved without sacrificing the Ron. A ferroelectric layer (e.g., including HfxZryO) can be formed between a transistor gate dielectric layer and gate electrode to achieve such benefits.
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机译:本文公开了用于具有阈值电压(VT)开关的基于铁电的场效应晶体管(FET)的技术,以增强RF开关晶体管的开态和关态性能。采用可以在两个铁电状态之间切换的铁电栅极电介质层,使得在晶体管截止状态(VT,hi)期间较高的VT和在晶体管导通状态(VT,lo)期间较低的VT。因此,由于可用的相对较高的栅极过驱动(Vg,on-VT,lo),可以将晶体管导通状态电阻(Ron)维持在较低水平,同时由于晶体管的导通状态仍然在晶体管截止状态下处理相对较高的最大RF功率。高VT,hi -Vg,off值。因此,可以在不牺牲最大RF功率的情况下提高RF开关晶体管的Ron,和/或反之亦然,可以在不牺牲Ron的情况下提高最大RF功率。可以在晶体管栅极介电层和栅电极之间形成铁电层(例如,包括Hf x Sub> Zr y Sub> O)以实现这种益处。
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