Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

摘要

Enhancement-mode AlInN/GaN metal-insulator-semiconductor heterostructure field-effect transistors on silicon are reported. A fluorine-based plasma treatment and gate dielectric are employed, and the devices exhibit a threshold voltage of +3 V. A drain current density of 295 mA/mm for a gate bias of +10V is measured. An excellent off-state blocking voltage capability of 630V for a leakage current of 1 μA/mm, and over 1000V for 10 μA/mm are achieved on a 20-μm-gate-drain separation device at gate bias of 0 V. The dynamic on-resistance is ～2.2 times the DC on-resistance when pulsing from an off-state drain bias of 500 V.