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chemical mechanical polishing apparatus for controlling polishing uniformity

机译:用于控制抛光均匀性的化学机械抛光设备

摘要

A chemical mechanical polishing apparatus of the present invention includes: a polishing pad positioned on a polishing platen; a polishing head having a membrane holding a wafer positioned on the polishing pad and having a polishing slurry supply line capable of supplying polishing slurry; and a retainer ring installed on the circumference of the membrane to come in contact with the polishing pad so as to prevent the wafer from being separated and having polishing slurry supply holes connected to the polishing slurry supply line to supply the polishing slurry onto the polishing pad. Therefore, the chemical mechanical polishing apparatus can control the polishing uniformity of substance layers on the wafer.
机译:本发明的化学机械抛光设备包括:位于抛光台板上的抛光垫;抛光头,其具有将晶片保持在抛光垫上的膜,并且具有能够供应抛光浆的抛光浆供应管线;固持环安装在膜的圆周上,以与抛光垫接触,以防止晶片分离,并具有与抛光浆供应线相连的抛光浆供应孔,以将抛光浆供应到抛光垫上。因此,化学机械抛光设备可以控制晶片上物质层的抛光均匀性。

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