Method for manufacturing semiconductor epitaxial wafer and method for manufacturing semiconductor device

摘要

Provided is a method for manufacturing a semiconductor epitaxial wafer, which is capable of producing a semiconductor epitaxial wafer in which the passivation effect by hydrogen is sufficiently obtained in the epitaxial layer even when provided in a low-temperature device formation process. The method for manufacturing the semiconductor epitaxial wafer 100 of the present invention irradiates the surface 10A of the semiconductor wafer 10 with cluster ions 12 containing carbon, phosphorus and hydrogen as constituent elements, A first step of forming a modified layer 14 in which the constituent elements of the cluster ions are dissolved in a surface layer portion of the semiconductor wafer, and an epitaxial layer 18 on the modified layer 14 of the semiconductor wafer Has a second step of forming, and when the number of atoms of carbon, phosphorus and hydrogen in the cluster ion 12 is expressed as C