Method of manufacturing semiconductor wafer, semiconductor wafer manufactured by the same, semiconductor epitaxial wafer, and method of manufacturing the semiconductor epitaxial wafer

摘要

There is disclosed a method of manufacturing a semiconductor wafer which has a dopant evaporation preventive film formed on one of main surfaces thereof, wherein a film serving as the dopant evaporation preventive film is formed on the one of the main surface by a plasma CVD method. There is also disclosed a method of manufacturing a semiconductor wafer having a plasma CVD film on one of main surfaces, wherein the plasma CVD film is formed on the one of the main surfaces of the semiconductor wafer so that a stress between the plasma CVD film and the semiconductor wafer falls in a range of 110.sup.8 -110. sup. 9 dyne/cm.sup.2. Finally, a semiconductor wafer is disclosed having a plasma CVD film formed on only one face that serves as a barrier to autodoping during processing and which may function to create within the semiconductor wafer a strained layer that can getter impurities.