MANUFACTURING METHOD OF SEMICONDUCTOR WAFER FOR EPITAXIAL GROWTH, SEMICONDUCTOR WAFER FOR EPITAXIAL GROWTH, AND MANUFACTURING METHOD OF SEMICONDUCTOR EPITAXIAL WAFER

摘要

To provide a manufacturing method of a semiconductor wafer for epitaxial growth capable of maintaining hydrogen at a high concentration in a surface portion of the semiconductor wafer and can have strong gettering.SOLUTION: A manufacturing method of a semiconductor wafer for epitaxial growth according to the present invention includes a first step of irradiating the surface of the semiconductor wafer with cluster ions containing carbon and hydrogen as constituent elements to form a modified layer and a second step of irradiating the semiconductor wafer with electromagnetic waves after the first step and performing heat treatment for recovering crystallinity on the semiconductor wafer, and in the first step, a part of the modified layer in the thickness direction is an amorphous layer, and in the second step, a recrystallized single crystal layer is formed while maintaining an amorphous state in a part of the deep portion.SELECTED DRAWING: Figure 1