A method for manufacturing a semiconductor wafer having an epitaxial layer in a deposition chamber, an apparatus for manufacturing a semiconductor wafer having an epitaxial layer, and a semiconductor wafer having an epitaxial layer

摘要

The present invention is directed to placing a substrate wafer in an edge region of the back surface of the substrate wafer on a placement region of the susceptor; Loading the substrate wafer on the susceptor and the susceptor into the deposition chamber by contacting the susceptor and transporting the substrate wafer on the susceptor and susceptor from the load lock chamber into the deposition chamber; Depositing an epitaxial layer on a substrate wafer; By unloading the deposition chamber by contacting the susceptor and transporting the semiconductor wafer with the susceptor and epitaxial layer from the deposition chamber into the load lock chamber, the semiconductor wafer is fabricated and deposited on the susceptor during deposition of the epitaxial layer. And unloading the deposition chamber and transporting the semiconductor wafer into the loadlock chamber.