Strain Engineering of Epitaxially Transferred, Ultrathin Layers of III- V Semiconductor on Insulator.

摘要

Strain state of ultrathin InAs-on-insulator layers obtained from an epitaxial transfer process is studied. The as-grown InAs epilayer (10 20 nm thick) on the GaSb/AlGaSb source wafer has the expected approximately 0.62% tensile strain. The strain is found to fully release during the epitaxial transfer of the InAs layer onto a Si/SiO2 substrate. In order to engineer the strain of the transferred InAs layers, a ZrOx cap was used during the transfer process to effectively preserve the strain. The work presents an important advance toward the control of materials properties of III-V on insulator layers.