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Characterization and reliability studies towards piezoelectrically actuated RF-MEMS switches

机译:压电驱动RF-MEMS开关的特性和可靠性研究

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摘要

This PhD research aims to develop high density piezoelectric RF-MEMS switch arrays to be integrated in an energy-efficient agile RF transceiver with reconfigurable antenna. According to the comparison of performance criteria for various RF-MEMS switches, the galvanic switches are broadband and have a higher isolation than capacitive switches. The piezoelectric switches have better performance in actuation voltage, speed, linearity than electrostatic switches. Therefore, we aim to study towards galvanic RF-MEMS switches using PZT thin film actuators. An accurate characterization of the device under test across a wide range in frequency is important not only for a comprehensive understanding of the device but also for detecting the degradation/breakdown of the device. This thesis studies the calibration and de-embedding methods of pF-level capacitance measurements of the switches, and provides an equivalent circuit presenting the origins of all the parasitics. The low-frequency and quasi-static capacitance-voltage curves yield different results from classical high-frequency and radio-frequency C-V curves around pull-in and pull-out. This phenomenon is explained by a transducer model, which presents the coupling between mechanical and electrical operations of RF-MEMS switches. Then the study goes towards the reliability of metal-insulator-metal (MIM) capacitors with PZT thin film, which are potential piezoelectric actuators of the target device. We find that the ion milling process induced charging should be controlled, or better still eliminated. By comparing two kinds of PZT capacitors, it appears that direct ion bombardments of the PZT surface may cause PZT degradation/damage. The measurement conditions and the stacks of PZT MIM capacitors also influence the reliability. Humidity greatly worsens PZT degradation and breakdown. To measure PZT material quality, it is important to prevent moisture in the measurement. Both reversible and irreversible PZT degradation/breakdown are observed to happen during time-dependent-dielectric-breakdown. At the same composition and layer thickness, the crystal structure of PZT determines the breakdown voltage to a large extent. A higher temperature or a larger voltage leads to a shorter breakdown time.
机译:这项博士研究旨在开发高密度压电RF-MEMS开关阵列,将其集成到具有可重构天线的节能型灵活RF收发器中。根据各种RF-MEMS开关性能标准的比较,电流开关具有宽带性,并且比电容式开关具有更高的隔离度。压电开关在驱动电压,速度,线性度方面比静电开关更好。因此,我们旨在研究使用PZT薄膜致动器的电RF-MEMS开关。在广泛的频率范围内对被测设备进行准确的表征不仅对于全面了解设备非常重要,而且对于检测设备的劣化/故障很重要。本文研究了开关的pF级电容测量的校准和去嵌入方法,并提供了一个等效电路,该电路表示了所有寄生源。低频和准静态电容-电压曲线产生与引入和引出周围的经典高频和射频C-V曲线不同的结果。此现象由换能器模型解释,该换能器模型显示了RF-MEMS开关的机械和电气操作之间的耦合。然后,研究着眼于具有PZT薄膜的金属-绝缘体-金属(MIM)电容器的可靠性,该电容器是目标器件的潜在压电致动器。我们发现,离子铣削过程中感应的带电应该得到控制,或者更好地消除。通过比较两种PZT电容器,似乎直接对PZT表面进行离子轰击可能会导致PZT退化/损坏。测量条件和PZT MIM电容器的堆叠也会影响可靠性。湿度极大地恶化了PZT的降解和分解。要测量PZT材料的质量,重要的是要防止测量中受潮。可观察到的和不可逆的PZT降解/击穿都发生在随时间变化的介电击穿过程中。在相同的组成和层厚度下,PZT的晶体结构在很大程度上决定了击穿电压。较高的温度或较高的电压会导致更短的击穿时间。

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  • 作者

    Wang, Jiahui;

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  • 年度 2017
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  • 原文格式 PDF
  • 正文语种 en
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