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Radiation imaging detectors made by wafer post-processing of CMOS chips

机译:通过CMOS芯片的晶片后处理制成的放射线成像探测器

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摘要

In this thesis several wafer post-processing steps have been applied to CMOS chips. Amplification gas strucutures are built on top of the microchips. A complete radiation imaging detector is obtained this way. Integrated Micromegas-like and GEM-like structures were fabricated on top of Timepix CMOS chips. Single electron efficiency, measured by counting the number of detected electrons from an 55Fe conversion in Ar/iC4H10 (95/5) was found to be well above 90%. The detector provides high single electron efficiency, three dimensional reconstruction of charged particles trajectory, a fine pixel pitch and it has a low mass. All these features make it a suitable candidate for tracking of charged particles in future detectors like ATLAS or CMS after the LHC upgrade or the International Linear Collider. Micromegas-like and GEM-like structures can be fairly compared as same materials and dimentions can be used. It was found that GEM-like structures having a big amount of insulator perform worse than similar Micromegas-like structures. The maximum achievable gain before sparks is lower for GEM-like that for Micromegas-like. When the amount of insulator is reduced in the GEM-like structures, having recessed insulator walls with respect to the metal electrodes, the performance is similar to Micromegas-like structures. Multistage detectors on top of Timepix chips were also built using wafer postprocessing. Tge devices were fully operational and cosmic rays could be detected. The spark rate of multistage detectors compared to single detectors must be studied. Also the signal development in these detectors is expected to be faster that in single stage detectors. Spark damage is a commong problem in gaseous detectors. Sparks can destroy the readout electronics. We have deposited a-Si:H and SiRN on Timepix chips. We have shown that these high resistive layer deposited on top of the CMOS chip can help to reduce the spark problems. Discharges energy is reduced and microchips can survive the discharges that before would destroy them. Future detectors are not required any more not to spark as they can now be made spark proof. Integrated detectors can suffer reliability problems because of degradation due to moisture exposure. Also mechanical attacks will make the devices not to work. We have evaluated these problems to give storage and transportations recommendations. The use of other materials less sensitive to humidity were also studied.
机译:在本文中,几个晶片后处理步骤已应用于CMOS芯片。扩增气体结构构建在微芯片之上。这样就获得了完整的放射线成像检测器。在Timepix CMOS芯片上制造了类似Micromegas和GEM的集成结构。发现通过计数从Ar / iC4H10(95/5)中的55Fe转换中检测到的电子数来测量的单电子效率远高于90%。该检测器具有很高的单电子效率,带电粒子轨迹的三维重构,精细的像素间距并且质量低。所有这些功能使其成为在LHC升级或国际直线对撞机之后的未来探测器(如ATLAS或CMS)中跟踪带电粒子的合适候选者。由于可以使用相同的材​​料和尺寸,因此可以公平地比较类似微米级和类似GEM的结构。发现具有大量绝缘体的类GEM结构比类似的Micromegas类结构性能更差。类似于GEM的GEM相比,火花前的最大可实现增益要低。当在相对于金属电极具有凹陷的绝缘体壁的GEM状结构中减少绝缘体的量时,性能类似于Micromegas状结构。还使用晶圆后处理技术在Timepix芯片上构建了多级检测器。 Tge设备完全可以运行,可以检测到宇宙射线。与单级探测器相比,必须研究多级探测器的火花率。同样,这些检测器中的信号发展也有望比单级检测器中的更快。火花损坏是气体检测器中的常见问题。火花会损坏读数电子设备。我们已经在Timepix芯片上沉积了a-Si:H和SiRN。我们已经证明,沉积在CMOS芯片顶部的这些高电阻层可以帮助减少火花问题。放电能量减少了,微芯片可以幸免于以前的放电破坏。不再需要将来的探测器不发火花,因为现在可以将它们制成防火花的。集成检测器可能会由于暴露在湿气中而导致可靠性下降。机械攻击也会使设备无法正常工作。我们对这些问题进行了评估,以提供存储和运输建议。还研究了对湿度不太敏感的其他材料的使用。

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    Blanco Carballo, V.M.;

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  • 年度 2009
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