首页> 外国专利> CMOS X- X-ray detector or image sensor embodied with one chip based on CMOS and method of manufacturing the same

CMOS X- X-ray detector or image sensor embodied with one chip based on CMOS and method of manufacturing the same

机译:用基于CMOS的一个芯片实现的CMOS X射线探测器或图像传感器及其制造方法

摘要

The present invention relates to an X-ray detector or an image sensor which can be implemented as a CMOS-based single chip capable of high performance, high resolution, large-area and large-area expansion, a semiconductor substrate, an array on the upper surface of the semiconductor substrate, A plurality of pixel blocks capable of sensing an optical signal; a plurality of pixel blocks arranged corresponding to the respective pixel blocks on a lower surface of the semiconductor substrate, the pixel blocks including an analog-digital conversion (ADC) An X-ray detector or an image sensor that can be implemented as a CMOS-based single chip and includes a conductive pattern that is capable of electrically connecting the pixel block and the lower corresponding circuit portion through the lower corresponding circuit portion and the semiconductor substrate, / RTI
机译:X射线检测器或图像传感器技术领域本发明涉及可以实现为高性能,高分辨率,大面积和大面积扩展的基于CMOS的单芯片的X射线检测器或图像传感器,半导体基板,其上的阵列。半导体衬底的上表面,多个像素块,能够检测光信号。对应于半导体衬底的下表面上的各个像素块布置的多个像素块,所述像素块包括模数转换(ADC),可以实现为CMOS-X射线的X射线检测器或图像传感器。基于单个芯片并且包括导电图案,该导电图案能够通过下部对应电路部分和半导体衬底电连接像素块和下部对应电路部分,

著录项

  • 公开/公告号KR101715245B1

    专利类型

  • 公开/公告日2017-03-13

    原文格式PDF

  • 申请/专利权人 한국과학기술원;

    申请/专利号KR20140077993

  • 发明设计人 이완규;전호승;

    申请日2014-06-25

  • 分类号G01T1/24;A61B6;G01T1/161;H01L31/09;

  • 国家 KR

  • 入库时间 2022-08-21 13:25:51

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号