A snap-back free Shorted Anode Super-Junction TCIGBT

摘要

A novel structure called the Shorted-Anodude Super-Junction Trench Clustered IGBT (SA-SJ-TCIGBudT) is proposed and uddemonstrated through numerical simulations in 1.2-kudV, Field-Stop technology. This device is based on udthe Super-Junction udTrench Clustered IGBT (SJ-TCIGBT) concept. In the SudA-SJ-TCIGBT structure, due to the introduction of aud segmented nud+ud-anode, udthe device can operate in both forward conducting mudode and freewheeling diode mode without any snap-baudck in the udcurrent voltage characteristics. In comparison to tudhe SJ-TCIGBT structure, the proposed device shows sudignificant udimprovement in trade-off relationship between forwaudrd voltage drop and switch off energy losses. Simuudlation results show udthat 25% decrease in switching energy losses can beud achieved. Moreover, the tail current is effectiveudly reduced without any udincrease in the overshoot voltage. Detailed two dimudensional modelling of the structure shows that signudificant amount of udexcess electrons are extracted through the shorted-udanode structure during turn-off process.