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Observation of silicon front surface topographs of an ultralarge-scale-integrated wafer by synchrotron x-ray plane wave

机译:同步加速器X射线平面波观察超大规模集成晶片的硅正面形貌

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摘要

Surface roughness and undulation of unpatterned silicon wafers are serious issues for ultralarge-scale-integrated circuit devices, even after fine mechanochemical polishing. It has never been clarified whether the undulations exist only on the surface or also exist inside the bulk crystal. We produced grazing incident diffraction topographs at three x-ray photon energies, with penetration depths estimated to be 3.85 nm, 4.78 nm, and 1.28 µm. All the topographs contained striation. We also obtained clear total reflection images using synchrotron x-ray plane waves, which also showed striation patterns at penetration depths from 3.85 nm to 1.28 µm. These results indicate that the origin of the patterns is not at the surface but is inside the Si wafer. The origin of striation patterns, observed in the topographs, was found not to be due to mechanochemical polishing processes but to crystal growth.
机译:即使在精细机械化学抛光之后,对于超大规模集成电路器件来说,未图案化的硅晶片的表面粗糙度和起伏也是严重的问题。从未明确起伏是仅存在于表面上还是存在于块状晶体内部。我们制作了三种X射线光子能量的掠入射衍射形貌图,其穿透深度估计为3.85 nm,4.78 nm和1.28 µm。所有地形都包含条纹。我们还使用同步加速器X射线平面波获得了清晰的全反射图像,该图像在穿透深度为3.85 nm至1.28 µm时也显示出条纹图案。这些结果表明图案的起源不是在表面而是在硅晶片内部。发现在地形图中观察到条纹图案的起源不是由于机械化学抛光过程,而是由于晶体生长。

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