Ballistic devices based on T-Branch Junctions and YBranchudJunctions on GaInAs/AlInAs heterostructures

摘要

We present processes for building passive andudactive ballistic devices. A 2D Monte Carlo simulator was usedudto optimize these devices. We present also the study of theudtransition between ballistic and ohmic transport in T-BranchudJunctions (TBJs) at room temperature by using DCudcharacterization. Then we show experimental results for YBranch Junctions (YBJs) compared with Monte CarloudSimulations.