Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP

摘要

We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GalnAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO_2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GalnAs/InP to define the TBJ-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices.