A Novel SR Latch Device Realized by Integration of Three-Terminal Ballistic Junctions in InGaAs/InP

摘要

In this letter, a novel sequential logic device based on three-terminal ballistic junctions (TBJs) is proposed and demonstrated. Two TBJs and two in-plane gates are laterally integrated in a high-electron-mobility InGaAs/InP quantum-well material by a single-step lithography process. Electrical measurements reveal that the integrated device functions as a set–reset (SR) latch with voltage gains at room temperature. The demonstrated device provides a new and simple circuit design for SR latches in digital electronics.