Room-Temperature Carrier Lifetimes and Optical Nonlinearities of GaInAs/AlInAsand GaAlInAs/AlInAs MQW Devices at 1.3 Micrometers (Report for June 1990-June 1991.)

摘要

The room-temperature nonlinear absorption spectra of a GaInAs/AlInAs and aGaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 micrometers using a pump probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2 x 10 to the 18th power and 1.0 x 10 to the 18th power /cc with carrier lifetimes of approximately 2.3 ns and approximately 750 ps for the two samples, respectively. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy (MBE) with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical switching devices. A 175 ps recovery time was measured for the etalon at room temperature.