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Studies of high DC current induced degradation in III-V nitride based heterojunctions

机译：III-V氮化物基异质结中高直流电流引起的退化的研究

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Ho WY; Surya C; Tong KY; Lu LW; Ge WK;
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年度 2000
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1. Studies of high DC current induced degradation in III-V nitride based heterojunctions [J] . Ho W.Y., Surya C. IEEE Transactions on Electron Devices . 2000,第7期

机译：III-V氮化物基异质结中高直流电流引起的退化的研究
2. Polarization Induced Charge at Heterojunctions of the III-V Nitrides and Their Alloys [J] . B. E. Foutz, O. Ambacher, M. J. Murphy, Physica status solidi, B. Basic research . 1999,第1期

机译：极化诱导的III-V氮化物及其合金的异质结处的电荷
3. Influence of pseudomorphic base-emitter spacer layers on current-induced degradation of beryllium-doped InGaAs/InAlAs heterojunction bipolar transistors [J] . Kaiyan Zhang, Xiangkun Zhang IEEE Transactions on Electron Devices . 1996,第1期

机译：拟态基极-发射极隔离层对掺杂铍的InGaAs / InAlAs异质结双极晶体管的电流诱导降解的影响
4. Study of flicker noise in III-V nitride based heterojunctions due to hot-electron stressing [C] . Ho W.Y., Surya C. Electron Devices Meeting, 1998. Proceedings. 1998 IEEE Hong Kong . 1998

机译：热电子应力引起的基于III-V族氮化物的异质结中的闪烁噪声研究
5. Peak radiative efficiency and electron-drift-induced efficiency droop in iii-v nitride-based light-emitting diodes. [D] . Lin, Guan-Bo. 2013

机译：iii-v氮化物基发光二极管的峰值辐射效率和电子漂移引起的效率下降。
6. Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells [O] . Ching-Wen Chang, Paritosh V. Wadekar, Hui-Chun Huang, 2020

机译：光捕获诱导III-氮化物纳米棒/ Si（111）异质结太阳能电池的高短路电流密度
7. Studies of high DC current induced degradation in III-V nitride based heterojunctions [O] . Ho WY, Surya C, Tong KY, 2000

机译：高直流电流引起的III-V族氮化物异质结退化的研究

Studies of high DC current induced degradation in III-V nitride based heterojunctions

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